inchange semiconductor isc product specification isc silicon npn power transistor BUP22B/c description collector-emitter sustaining voltage- : v ceo(sus) = 400v(min)-BUP22B = 450v(min)-bup22c high switching speed applications designed for use in converters, inverters, switching- regulators, motor control systems etc. absolute maximum ratings(t a =25 ) symbol parameter value unit BUP22B 750 v ces collector- emitter voltage v be =0 bup22c 850 v BUP22B 400 v ceo collector-emitter voltage bup22c 450 v v ebo emitter-base voltage 9 v i c collector current-continuous 8 a i cm collector current-peak 20 a i b b base current-continuous 4 a i bm base current-peak 6 a p c collector power dissipation @ t c =25 125 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 1.0 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BUP22B/c electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit BUP22B 400 v ceo(sus) collector-emitter sustaining voltage bup22c i c = 0.1a ;i b = 0; l=25 mh b 450 v BUP22B i c = 6a; i b = 0.8a b 1.5 v ce (sat) collector-emitter saturation voltage bup22c i c = 6a; i b = 1a b 1.5 v BUP22B i c = 6a; i b = 0.8a b 1.5 v be (sat) base-emitter saturation voltage bup22c i c = 6a; i b = 1a b 1.5 v i ces collector cutoff current v ce = v cesmax ;v be = 0 v ce = v cesmax ;v be = 0; t j = 125 1 2 ma i ebo emitter cutoff current v eb = 9v; i c =0 10 ma h fe dc current gain i c = 1a; v ce = 5v 25 switching times; resistive load t on turn-on time 0.5 s t s storage time 3.0 s t f fall time for BUP22B i c = 6a; i b1 = -i b2 = 0.8a for bup22c i c = 6a; i b1 = -i b2 = 1a 0.3 s isc website www.iscsemi.cn 2
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